| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a fine isolated pattern at almost the same degree as dense patterns in exposure for transferring a circuit pattern in which the isolated pattern and the dense patterns are mixed. <P>SOLUTION: The isolated pattern 15 and the dense patterns 24a to 24c consisting of a plurality of prescribed patterns arrayed on a semiconductor substrate are exposed by using a photomask. The photomask is provided with a transparent substrate 1, a pair of 1st patterns 13a, 12b formed on both the sides of the isolated pattern 15 so as to be separated from each other at a 1st interval, auxiliary aperture patterns 12a, 13b formed adjacently to the 1st patterns 13a, 13b so as to be separated from each other at the 1st interval, and a plurality of 2nd patterns 22a, 22b, 23a, 23b formed so as to hold a plurality of prescribed patterns 24a to 24c between them. The phase of exposure light transmitting the pair of the 1st patterns 13a, 12b and the auxiliary aperture patterns 12a, 13b and the phase of exposure light transmitting the 2nd patterns 22a, 22b, 23a, 23b are mutually reversed between adjacent patterns. <P>COPYRIGHT: (C)2003,JPO |
