| 摘要 |
PROBLEM TO BE SOLVED: To provide a coating agent to obtain a fine pattern having excellent controllability for pattern dimension, a favorable profile and characteristics required for a semiconductor device in a method for forming a fine pattern by using the coating agent, and to provide the method for forming a fine pattern by using the agent. SOLUTION: The coating agent is used to form a fine pattern by applying the agent on a substrate having a photoresist pattern, reducing the gap in the photoresist pattern by using the heat shrinking effect of the agent, and then substantially completely removing the coating. The coating agent for the fine pattern is characterized in that it contains (a) a water-soluble polymer and (b) a water-soluble crosslinking agent having at least one nitrogen atom in the structure. The method for forming a fine pattern is carried out by using the above coating agent. COPYRIGHT: (C)2003,JPO |
