发明名称 |
Method of fabricating semiconductor structures |
摘要 |
A method is provided for fabricating a nitride based resonant cavity semiconductor structure with a first distributed Bragg reflector (122) on a sapphire substrate (100), a second substrate (128) bonded to the first distributed Bragg reflector (122), the sapphire substrate (100) removed by laser-assisted epitaxial lift-off, and fabricating a second Bragg reflector (142) on the semiconductor structure opposite the first distributed Bragg reflector. The nitride based resonant cavity semiconductor structure can be a VCSEL, LED or photodetector, or a combination of said devices. <IMAGE>
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申请公布号 |
EP1326290(A2) |
申请公布日期 |
2003.07.09 |
申请号 |
EP20020258579 |
申请日期 |
2002.12.12 |
申请人 |
XEROX CORPORATION |
发明人 |
CHUA, CHRISTOPHER L.;KNEISSL, MICHAEL A.;BOUR, DAVID P. |
分类号 |
H01L33/00;H01L33/10;H01L33/46;H01S5/183;H01S5/323;H01S5/343;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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