| 摘要 |
<p>In achieving miniaturization and a large scale integration of a transistor, the operating speed can be increased by effectively suppressing a short channel effect, and reducing the capacitance between a drain or a source and a gate. A method of manufacturing a trench gate type field effect transistor comprises forming an impurity layer (9), which is to be a source or a drain, in a semiconductor substrate (1), forming a first trench (20) in this semiconductor substrate (1), forming a side wall (21) made of an insulating material on a side wall of the first trench (20), forming a second trench (22) in a bottom surface of the first trench with the side wall (21) as a mask, forming a gate insulating film (5) on a bottom surface of the second trench (22), and forming a gate (G) so as to fill the second trench (22) and the first trench (20). <IMAGE></p> |
