发明名称 |
HIGH-FREQUENCY AMPLIFIER |
摘要 |
Between resistors 13, 14 and an NPN bipolar transistor 12 are interposed PNP bipolar transistors 21, 22 forming a current mirror 20 that uses a collector current of the NPN bipolar transistor 12 as a reference current, and determines a collector current of an NPN bipolar transistor 11. This makes possible to design a size ratio A of the PNP bipolar transistors 21, 22 so as to approximate a voltage drop DELTA Vb to a value close to zero, and to suppress the voltage drop DELTA Vb of the base voltage Vb accordingly to achieve a high power output and high efficiency when a high frequency input signal Pin increases and generates a base rectified current. <IMAGE>
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申请公布号 |
EP1326328(A1) |
申请公布日期 |
2003.07.09 |
申请号 |
EP20000966443 |
申请日期 |
2000.10.12 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MORI, KAZUTOMI;SHINJO, SHINTAROU;JOBA, HIROYUKI;TAKAHASHI, YOSHINORI;IKEDA, YUKIO;TAKAGI, TADASHI |
分类号 |
H03F1/02;H03F1/30;H03F3/19;H03F3/343;(IPC1-7):H03F1/02 |
主分类号 |
H03F1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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