发明名称 |
Non-planar copper alloy target for plasma vapor deposition systems |
摘要 |
A non-planar target can be configured for use in a plasma vapor deposition (PVD) process in which ions bombard the non-planar target and cause alloy atoms present in the non-planar target to be knocked loose and form an alloy film layer. The target includes a top planar section having a first alloy concentration and a side annular section having a second alloy concentration. The side annular section has ends coupled to ends of the top planar section. The first alloy concentration and the second alloy concentration are different.
|
申请公布号 |
US6589408(B1) |
申请公布日期 |
2003.07.08 |
申请号 |
US20020107778 |
申请日期 |
2002.03.27 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG PIN-CHIN CONNIE;BESSER PAUL R.;LOPATIN SERGEY D.;TRAN MINH Q. |
分类号 |
C23C14/34;(IPC1-7):C23C14/35 |
主分类号 |
C23C14/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|