发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in <011> direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.
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申请公布号 |
US6589807(B2) |
申请公布日期 |
2003.07.08 |
申请号 |
US20010867440 |
申请日期 |
2001.05.31 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
SHIMOYAMA KENJI;KIYOMI KAZUMASA;GOTOH HIDEKI;NAGAO SATORU |
分类号 |
H01L33/06;H01L33/24;H01S5/227;H01S5/34;(IPC1-7):H01L21/00;H01L29/06;H01L27/15 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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