| 摘要 |
Methods of forming FLASH field effect transistor gates and a non-FLASH field effect transistor gates are described. In one implementation, a substrate comprising first and second semiconductive material portions is provided. A FLASH transistor gate is partially formed to include at least a first gate dielectric material received over the first semiconductive material portion, a floating gate material overlying the first gate dielectric material, and a second gate dielectric material received over the floating gate material. The second gate dielectric material comprises silicon nitride. In a common oxidizing step, the silicon nitride of the second gate dielectric material and the second semiconductive material portion are oxidized effective to form both a) a gate oxide layer of a non-FLASH transistor gate overlying the second semiconductive material portion, and b) silicon dioxide as part of the second gate dielectric material of the FLASH transistor gate. Additional implementations are contemplated.
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