Method of forming a semiconductor device and structure therefor

摘要

A method of forming a semiconductor device (10, 40, 45, 50) forms a plurality of P and N stripes (16,17) within a first region (12) that is formed with an opposite conductivity to a substrate (11). The plurality of P and N stripes assist in providing a low on-resistance. A portion (15) of the first region underlies the P and N stripes and protects the semiconductor device from high voltages applied to the drain. A base layer (41) and a cap layer (48) further reduce the on-resistance of the semiconductor device.