发明名称 |
Manufacturing method for top-gate type and bottom-gate type thin film transistors |
摘要 |
A microcrystal silicon film is formed on a substrate by using a silicide gas, a hydrogen gas, and a source gas that enables introduction of a metal element for accelerating crystallization of silicon in a capacitance-coupling plasma CVD apparatus. The action of the metal element provides a high film forming rate. Therefore, a technique for forming a microcrystal silicon film with high quality and high film forming rate can be provided. |
申请公布号 |
US6589822(B1) |
申请公布日期 |
2003.07.08 |
申请号 |
US19990407165 |
申请日期 |
1999.09.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI |
分类号 |
C30B29/06;C23C16/24;C23C16/511;H01L21/20;H01L21/205;H01L31/04;H01L31/18;(IPC1-7):H01L21/84 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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