发明名称 |
Fine pattern formation method and semiconductor device or liquid crystal device manufacturing method employing this method |
摘要 |
There is provided a method of forming a fine pattern comprising the steps of: forming a work film to be processed on a substrate; forming a hard mask film which has a different etching rate from the work film and can serve as a mask to the work; forming a first resist pattern on the hard mask film by lithography; forming a hard mask pattern by etching a first section which is not covered with the first resist pattern till the upper surface of the work film is exposed; removing the first resist pattern; forming a second resist pattern on the hard mask pattern by lithography; etching a second section which is not covered with the second resist pattern by isotropic etching; removing the second resist pattern; and etching the work film through the hard mask pattern as a mask, partially subjected to the isotropic etching. This method enables to prevent the whole remaining patterns from shrinking even when fine patterns beyond the resolving power in lithography technologies are formed.
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申请公布号 |
US6589880(B2) |
申请公布日期 |
2003.07.08 |
申请号 |
US20000749834 |
申请日期 |
2000.12.28 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ISHIBASHI TAKEO |
分类号 |
H01L21/302;G03F7/00;G03F7/20;H01L21/027;H01L21/306;H01L21/3065;H01L21/311;H01L21/3213;H01L21/8242;H01L27/108;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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