Method for cleaning a silicon-based substrate without NH4OH vapor damage

摘要

A method for cleaning a silicon-based substrate in an ammonia-containing solution without incurring any damages to the silicon surface by NH4OH vapor is described. The method can be conducted by first providing a silicon-based substrate that has a silicon surface, then forming a silicon oxide layer of very small thickness, i.e. less than 10 Å, on the silicon surface. The silicon-based substrate can then be cleaned in an ammonia-containing solution without incurring any surface damage to the silicon, i.e. such as the formation of silicon holes. The present invention novel method can be carried out by either adding an additional oxidation tank before the SC-1 cleaning tank, or adding an oxidant to a quick dump rinse tank prior to the SC-1 cleaning process.