发明名称 |
Metal gate with PVD amorphous silicon layer having implanted dopants for CMOS devices and method of making with a replacement gate process |
摘要 |
A semiconductor structure and method for making the same provides a metal gate on a silicon substrate. The gate includes a high dielectric constant on the substrate, and a physical vapor deposited (PVD) layer of amorphous silicon on the high k gate dielectric. The metal is then formed on the PVD amorphous silicon layer. Additional dopants are implanted into the PVD amorphous silicon layer. An annealing process forms silicide in the gate, with a layer of silicon remaining unreacted. The work function of the metal gate is substantially the same as a polysilicon gate due to the presence of the PVD amorphous silicon layer, while the additional doping of the PVD amorphous silicon layer lowers the resistivity of the gate electrode.
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申请公布号 |
US6589866(B1) |
申请公布日期 |
2003.07.08 |
申请号 |
US20000691226 |
申请日期 |
2000.10.19 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BESSER PAUL R.;XIANG QI;BUYNOSKI MATTHEW S. |
分类号 |
H01L21/28;H01L21/336;H01L29/49;(IPC1-7):H01L21/44;H01L21/320;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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