发明名称 Cryogenic tempering process for dynamoelectric devices
摘要 A process for treating a conductor winding component of a dynamoelectric device incorporates a cryogenic cycle having a ramp down phase during which the conductor winding component is ramped down from at least about -100° F. in a dry cryogenic environment to about -300° F. over several hours, preferably greater than five (5) hours and including seven (7) hours or more, followed by a cryogenic hold phase during which the conductor winding component is held at about -300° F. over an additional several hours, preferably greater than twenty-four (24) hours and including thirty-six (36) hours or more, followed by a cryogenic ramp up phase during which the conductor winding component is ramped up to about -200° F. over another several hours, preferably greater than twelve (12) hours and including eighteen (18) hours or more.
申请公布号 US6588218(B1) 申请公布日期 2003.07.08
申请号 US20020057808 申请日期 2002.01.25
申请人 CRYOPRO, L.L.C. 发明人 HUTCHISON DAVID C.
分类号 C21D6/04;C21D9/22;(IPC1-7):F25D25/00;F25D17/02;C22F1/08 主分类号 C21D6/04
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