发明名称 |
Memory device having improved programmability |
摘要 |
A method for enhancing the operating characteristics of memory devices (400C), such as flash memory devices, by manipulating the Fermi energy levels of the substrate (406) and the floating gate (404). In so doing, the gap between the minimum conduction band energy level (408) and the Fermi energy level (412) of the floating gate (404) is extended so as to readily facilitate the movement of electrons from the substrate (406) into the floating gate (404).
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申请公布号 |
US6590260(B1) |
申请公布日期 |
2003.07.08 |
申请号 |
US20020103077 |
申请日期 |
2002.03.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YANG NIAN;WANG JOHN JIANSHI;WANG ZHIGANG |
分类号 |
H01L21/28;H01L29/423;H01L29/788;(IPC1-7):H01L29/76;H01L29/786 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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