发明名称 Method of selectively processing wafer edge regions to increase wafer uniformity, and system for accomplishing same
摘要 In one illustrative embodiment, the method includes providing a wafer including at least one non-production area, forming a process layer above the wafer, forming a masking layer above the process layer, the masking layer being patterned so as to expose a portion of the process layer formed above the at least one non-production area, and performing a process operation on the exposed portion of the process layer formed above the at least one non-production area. In another aspect, the present invention is directed to a system that includes a controller for identifying at least one non-production area of a wafer, a photolithography tool for forming a masking layer above the process layer, the masking layer being patterned so as to expose a portion of the process layer formed above the at least one non-production area, and an etch tool for performing an etching process on the exposed portion of the process layer formed above the at least one non-production area.
申请公布号 US6589875(B1) 申请公布日期 2003.07.08
申请号 US20010920997 申请日期 2001.08.02
申请人 ADVANCED MICRO DEVICES, INC. 发明人 BODE CHRISTOPHER A.;PASADYN ALEXANDER J.
分类号 H01L21/311;H01L21/321;H01L21/3213;(IPC1-7):H01L21/311 主分类号 H01L21/311
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