Electrostatic discharge protection structure

摘要

An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure of the present invention uses a resistance capacitance (RC) circuit to distinguish an overshoot phenomenon caused by the instantaneous power-on from an ESD event, so as to prevent the ESD protection device, such as a P-type modified lateral silicon controlled rectifier (MLSCR), from being triggered unexpectedly by an overshoot phenomenon which results from the power-on under normal operation, and thereby the efficiency of the ESD protection device is promoted.