发明名称 Voltage boosting circuit for an integrated circuit device
摘要 A voltage boosting circuit for an integrated circuit includes a booster and a voltage clamp circuit. The booster generates a boosted voltage higher than the supply voltage in response to a boosting control signal. The voltage clamp circuit includes a voltage detector, a pulse generator, and a discharge circuit. The voltage detector generates, in response to the boosting control signal, a detected voltage signal representing an attribute of the boosted voltage. The pulse generator generates a pulse signal responsive to the detected voltage signal. And the discharge circuit discharges the boosted voltage during an activation period of the pulse signal. This largely stabilizes the output voltage of the booster.
申请公布号 US6590442(B2) 申请公布日期 2003.07.08
申请号 US20010877811 申请日期 2001.10.11
申请人 SAMSUNG ELECTRONICS, CO. LTD. 发明人 BYEON DAE-SEOK;LIM YOUNG-HO
分类号 G11C11/413;G11C5/14;G11C11/407;G11C16/06;G11C16/30;H02M3/07;(IPC1-7):G05F3/24 主分类号 G11C11/413
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