Method for the manufacture of a substrate, substrate manufactured in accordance with this method, carrier wafer and diamond jewel

摘要

A method is described for the production of a suitable substrate for the subsequent growth of a mono-crystalline diamond layer. This method includes the following steps:Selection of a substrate of a mono-crystalline material having a fixed lattice constant (aSi) or with a layer consisting of such a material.Manufacture of a strained silicon layer with foreign material atoms incorporated at substitutional lattice sites on the mono-crystalline material of the substrate.Transfer of the strained layer into an at least partly relaxed state in which it adopts by relaxation and through the selected foreign material concentration a lattice constant (aSi(C) which satisfies the condition n.aSi(C)=m.aD, wherein n and m are integers and aD is the lattice constant of diamond, with the relaxed layer forming the substrate or substrate surface for the epitaxial growth.