发明名称 |
Nitride open etch process based on trifluoromethane and sulfur hexafluoride |
摘要 |
A nitride etch process particularly useful when integrated with a silicon trench etch needing a sloping silicon surface adjacent to the interface between the silicon and an oxide layer intermediate the silicon and nitride. The nitride etch process is a plasma process having an etching gas mixture of sulfur hexafluoride (SF6) and trifluoromethane (CHF3) although nitrogen or oxygen may be added for additional controls. The trifluoromethane is believed to create a polymer passivation on the sidewalls of the hole being etched which, when the etch reaches the oxide-silicon interface, protects the interface and underlying silicon. The nitride etch may proceed through the oxide or a separate fluorocarbon-based oxide etching step may be performed before a bromine-based etch of the silicon starts.
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申请公布号 |
US6589879(B2) |
申请公布日期 |
2003.07.08 |
申请号 |
US20010766187 |
申请日期 |
2001.01.18 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WILLIAMS SCOTT M.;LIU WEI;MUI DAVID |
分类号 |
H01L21/302;H01L21/3065;H01L21/308;H01L21/311;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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