发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
An active layer is formed by using a crystalline silicon film that has been crystallized by utilizing a metal element for accelerating crystallization. A heat treatment is performed in an atmosphere containing a halogen element to remove the metal element by gettering. As a result, the active layer becomes a crystal structural body that is a collection of a plurality of needle-like or columnar crystals. A semiconductor device constructed by using this crystal structural body is given much superior performance.
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申请公布号 |
US6590230(B1) |
申请公布日期 |
2003.07.08 |
申请号 |
US19970951193 |
申请日期 |
1997.10.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;KOYAMA JUN;FUKUNAGA TAKESHI |
分类号 |
H01L21/322;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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