| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor memory device is provided to be capable of increasing the capacitance by maximizing the grains of MPS(Metastable PolySilicon). CONSTITUTION: A capacitor oxide layer(24) is formed on a semiconductor substrate(20) having a plug(22). A contact hole is formed to expose the plug(22) by selectively etching the capacitor oxide layer(24). A lower electrode(25) is formed by forming a polysilicon layer on the surface of the contact hole and the oxide layer and polishing the polysilicon layer. A metal oxide layer(26) is selectively formed on the surface of the oxide layer(24) and the lower electrode(25). An MPS layer(27) is then formed on the exposed lower electrode(25).
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