| 摘要 |
PURPOSE: A method for manufacturing a ferroelectric memory device is provided to be capable of improving gap-filling property of an additional metal wiring and simplifying manufacturing processes. CONSTITUTION: A transistor is formed at an active region of a semiconductor substrate(31). A plug(38a) is formed to connect a source and drain region(35a,35b) of the transistor. A lower electrode(39) and a ferroelectric film(40) are sequentially stacked on a field region of the substrate. An upper electrode(43a) is formed to connect simultaneously the ferroelectric film(40) and the plug(38a).
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