| 摘要 |
PURPOSE: A method for forming a capacitor is provided to be capable of increasing capacitance and preventing bridge between storage nodes by using an outer wall as a capacitor electrode instead of an inner wall of a storage node pattern. CONSTITUTION: The first insulating layer(32) having a polysilicon plug(33) is formed on a substrate(31). After forming the second insulating pattern(34a) on the resultant structure, a bit line(35) is formed at sidewalls of the second insulating pattern(34a). The first nitride layer(36) and the third insulating layer(37) are sequentially deposited on the resultant structure. A storage node contact hole is formed to expose the plug(33) by selectively etching the third insulating layer, the first nitride layer and the second insulating pattern. A storage node contact is filled into the storage node contact hole. A stacked pattern including the second nitride layer(40) and the fourth insulating layer(41) is sequentially formed on the storage node contact. A storage node(42) is formed at outer wall of the stacked patterns(40,41).
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