| 摘要 |
PURPOSE: A method of forming a plug in a semiconductor device is provided to improve device performance and reliability by depositing a tungsten layer in a fine contact hole having no voids by removing overhang of adhesive layer. CONSTITUTION: An interlayer dielectric(22) having a contact hole(23) to expose a lower conductive layer is formed on a semiconductor substrate(21). By an etching process of an adhesive layer(24), overhang generated at the adhesive layer in the beginning of the contact hole is removed. A contact plug is formed.
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