| 摘要 |
PURPOSE: A method of forming a dual gate insulation layer in a semiconductor device is provided to prevent moat and the generation of hump characteristic. CONSTITUTION: An isolation layer(22) is formed in an isolation region of a substrate(21) having the first and second region. The first gate insulation layer(23) is formed in the active region of the first and second region. An oxide layer is formed on only the substrate of the second region. The second insulation layer(26) is formed to have a thickness that is more thick than that of the first gate insulation layer, using an anti-oxidation layer(24) as a mask. The anti-oxidation layer is removed.
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