| 摘要 |
PURPOSE: A method for forming a gate electrode in a semiconductor device is provided to prevent generation of polymer residues, non-uniformity of gate electrode pattern, loss of the active region, and polystringer. CONSTITUTION: The first and second insulation layer(2,3) are sequentially deposited on a substrate(1). A gate hole is formed to etch the second insulation layer to expose a portion of the first insulation layer. A semiconductor layer(4) is deposited on the second insulation layer including the gate hole. A gate electrode is formed in the gate hole by polishing the semiconductor layer to expose the second insulation layer. A gate insulation layer is formed by removing the second insulation layer and by etching the first insulation layer.
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