| 摘要 |
PURPOSE: A method for manufacturing a liquid crystal display is provided to prevent under-etching or over-etching of source and drain electrodes, and a semiconductor layer by preventing under ashing or over ashing of a photoresist layer. CONSTITUTION: A gate insulating layer(103), a semiconductor layer(105a), and a metal layer(107a) are accumulated on a substrate(101) where a gate electrode(102) is formed. A first photoresist layer is formed on the metal layer. A second photoresist layer is formed, having an ashing rate slower than an ashing rate of the second photoresist layer. First and second photoresist patterns(109,115) including a half-tone photoresist layer formed at a gate area are formed by using a diffraction mask. The meal layer and the semiconductor layer are etched by using the photoresist patterns. The half-tone photoresist layer is removed. Source and drain electrodes of the gate area and an impurity layer of the semiconductor layer are etched by using the photoresist patterns.
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