| 摘要 |
PURPOSE: A slurry for chemical mechanical polishing of semiconductor device and a forming method of a metal line contact plug by using the same are provided to prevent damage of bit line by using a slurry containing polymer. CONSTITUTION: Bit lines(103) having a nitride hard mask(105) are formed on a semiconductor substrate(101). After forming an interlayer dielectric(107) on the resultant structure, a contact hole is formed by selectively etching the interlayer dielectric. An insulating spacer(111) is formed at both sidewalls of the bit lines and the contact hole. After forming a metal film on the resultant structure, a metal line contact plug(115) is formed in the contact hole by CMP of the resultant structure using a slurry. At this time, the slurry contains a polymer. That is, the interlayer dielectric(107) and the metal film have a relatively high polishing selectivity compared to the nitride hard mask(105), thereby preventing the damage of the bit line(103).
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