| 摘要 |
PURPOSE: A capacitor of a semiconductor device and its manufacturing method are provided to lower the height of a capacitor as the thickness of a plate electrode formed on the contact hole for a conventional capacitor by forming a plate electrode on the side wall of the contact hole for capacitor before forming a bottom electrode. CONSTITUTION: The capacitor comprises an interlayer dielectric having a contact hole on the substrate(41), a plug(47), an oxide layer(43) formed on the entire surface having a contact hole for capacitor to expose the plug, a plate electrode space and dielectric space formed sequentially on the side of the contact hole, and a storage node(61) connected to the plug.
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