| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the attack of moisture by protecting a gate electrode and an LDD region of a peripheral region to a nitride layer. CONSTITUTION: Gate electrodes(105) are formed on a semiconductor substrate(101) defined by a cell and peripheral region(I,II). The first nitride layer and the first HLD layer are sequentially formed on the resultant structure. After exposing the peripheral region(II), the first nitride spacer(112) having L-shape and the first HLD spacer(116) are sequentially formed at both sidewalls of the gate electrode. Then, the second nitride spacer is formed at both sidewalls of the cell region(I). The second nitride spacer(111) and the third HLD spacer(118) are formed at both sidewalls of the first HLD spacer of the peripheral region(II).
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