METHOD FOR FABRICATING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating an isolation layer of a semiconductor device is provided to prevent a defect in a trench and prevent a characteristic of the semiconductor device from being deteriorated by a subsequent process by performing an implant process during a trench formation process. CONSTITUTION: A pad insulation layer is formed on a semiconductor substrate(11). A photoresist layer pattern is formed on the pad insulation layer. The pad insulation layer is etched by using the photoresist layer pattern as a mask to expose the semiconductor substrate. Impurities for controlling a threshold voltage are implanted into the exposed semiconductor substrate by using the photoresist layer pattern as a mask. A predetermined thickness of the semiconductor substrate is etched to form the trench(21) by using the photoresist layer pattern as a mask. The photoresist layer pattern is eliminated.