| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve an insulation characteristic by preventing an active region of a semiconductor substrate from being damaged by an etch process for forming a contact hole and by preventing a loss of an insulation layer in the vicinity of a gate electrode. CONSTITUTION: A predetermined thickness of an insulation layer is formed on a semiconductor substrate(101) including a conductive interconnection on which a mask insulation layer pattern(109) is stacked. The insulation layer is blanket-etched to form an insulation layer spacer(113) on the sidewall of the conductive interconnection while a contact region of the substrate is exposed. A predetermined thickness of a selective silicon growth layer is grown on the contact region to form the first contact plug(115). An interlayer dielectric(117) having a contact hole exposing the first contact plug is formed on the resultant structure. A selective silicon growth layer is grown on the first contact plug exposed to the contact hole to form the second contact plug(119). The second contact plug and the interlayer dielectric are removed through a chemical mechanical polishing(CMP) process to form a contact plug composed of the second contact plug and the first contact plug wherein the mask insulation layer pattern is used as a polishing barrier in the CMP process.
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