| 摘要 |
PURPOSE: A method for fabricating a thin film is provided to accurately control the composition of a 12-16 group thin film as compared with a chemical vapor deposition and form a layer of a low impurity content by using an atomic layer deposition(ALD) method. CONSTITUTION: A 12-group compound is supplied and absorbed to a reactor in which a substrate is settled. The supply of the 12-group compound stops and purge gas is supplied to the reactor to eliminate the compound on the substrate. A 16-group compound is supplied to the reactor. The 16-group compound is reacted with the 12-group compound to form a thin film composed of a 12-group element and a 16-group element. The supply of the 16-group compound stops and purge gas is supplied to the reactor to remove the compound on the substrate.
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