METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to be capable of preventing damage of a TiN plug by forming a TiSiN layer between the TiN plug and a storage node. CONSTITUTION: After forming bit lines(103) on a substrate(101), a TiN plug(105) is formed between the bit lines. An etch stop layer(107), a core insulating layer(109) and a polysilicon layer are sequentially stacked on the resultant structure. By patterning the stacked structure, a trench is formed to expose the TiN plug(105). By implanting Si ions into the surface of the TiN plug(105) and annealing, a TiSiN layer(115) is formed on the TiN plug. A concave storage node is then formed on the trench. Then, a dielectric film and a plate electrode are sequentially formed on the lower electrode.