| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to be capable of improving the capacitance per unit surface area by using a plurality of parallel type capacitors. CONSTITUTION: An analog capacitor region and a memory region are defined at a semiconductor substrate(22). A bit line(34) is formed at the memory region and an electrode(36) is formed at the analog capacitor region. An insulating layer(38) is formed on the resultant structure for enclosing the bit line. A plurality of contact holes are formed in the insulating layer for exposing the bit line and the electrode. A plurality of storage nodes(48) are formed at the resultant structure. A dielectric layer(52) is formed on the resultant structure for enclosing the storage nodes formed at the analog capacitor region and the memory region.
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