| 摘要 |
PURPOSE: A method for depositing catalytic metal using D.C magnetron depositing equipment is provided to enable the catalytic metal to be deposited in a very small amount, that is, to a thickness of sub-angstrom by varying the deposition condition of D.C magnetron sputtering equipment. CONSTITUTION: In a method for depositing catalytic metal using D.C magnetron sputtering equipment(108), the method for depositing the catalytic metal using the D.C magnetron sputtering equipment comprises the steps of fixing a target(116) fabricated of catalytic metal to electrode(118) of the upper part of magnetron constructed inside vacuum chamber; introducing helium gas into the vacuum chamber; exciting the helium gas with plasma, and applying a certain voltage to the electrode to sputter the catalytic metal target; and depositing neutral molecules(122) of the sputtered target onto the surface of substrate(124) by moving the substrate to the upper part of the target, wherein the catalytic metal is nickel, flow rate of the helium gas is 300 to 500 sccm, moving speed of the substrate is 1 to 4 m/min, and voltage applied to the electrode is 50 to 250 W. In a method for depositing catalytic metal using sputtering equipment, the method for depositing the catalytic metal using the sputtering equipment comprises the steps of fixing a target fabricated of catalytic metal to electrode of the upper part of magnetron constructed inside vacuum chamber; introducing inert gas into the vacuum chamber; exciting the helium gas with plasma, and applying a certain voltage to the electrode to sputter the catalytic metal target; and depositing neutral molecules of the sputtered target onto the surface of substrate by moving the substrate to the upper part of the target, wherein the sputtering equipment is D.C sputtering equipment and RF sputtering equipment, and the inert gas is helium (He), neon (Ne) and argon (Ar).
|
