| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of obtaining high capacitance without enhancing the height of the capacitor. CONSTITUTION: An oxide layer(14) is formed on a semiconductor substrate(10) having a plug(13). A capacitor contact hole is formed to expose the plug(13) by selectively etching the oxide layer(14). A lower electrode(15) is formed on the surface of the contact hole and the oxide layer. After exposing the outer walls of the lower electrode(15) by selectively etching the oxide layer, an MPS(Metastable PolySilicon) layer(18) is formed on the inner walls. Then, the lower electrode(15) having the MPS layer(18) is isolated by an etch-back process to expose the surface of the oxide layer(14).
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