| 摘要 |
PURPOSE: A magnetic enhanced reactive ion etching apparatus is provided to be capable of improving uniformity when carrying out a plasma etching process by locating a plurality of permanent magnets at an etching chamber according to the gauss intensity of each magnet. CONSTITUTION: A plurality of permanent magnets are installed at an etching chamber. At this time, the permanent magnets are located at each predetermined position after dividing three groups made of the first, second, third group according to the gauss intensity and array position of each permanent magnet. At this time, the gauss intensity at a permanent magnet located position of at least one group, is larger than that of the center portion of the etching chamber. At the time, the gauss intensity of one group out of the other groups is the same as the half value of that of the center portion of the etching chamber, or higher.
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