| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve an overlay degree by exposing a main scale through a photolithography process using an exposure mask for exposing the main scale after a polycrystalline silicon layer is planarization-etched through a chemical mechanical polishing(CMP) method. CONSTITUTION: The semiconductor device includes a pattern for measuring the overlay formed in a scribe line. An additional exposure mask process is performed to expose the inner region of the pattern for measuring the overlay and the outer region of a predetermined width adjacent to the pattern for measuring the overlay. The exposure mask includes a mask region and a transmission region of 5-100 micrometer in size.
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