| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve an electrical characteristic by preventing a junction leakage current from increasing while using a normal rapid thermal process(RTP) and a spike RTP. CONSTITUTION: A gate insulation layer is formed on a semiconductor substrate(101). A gate electrode(107) is formed on the gate insulation layer. A lightly-doped-drain(LDD) region(109) is formed in the semiconductor substrate at both sides of the gate electrode. An insulation layer spacer(111) is formed on the sidewall of the gate electrode. The first implantation process is performed on the semiconductor substrate at both sides of the insulation layer spacer to form a low density implant region. The first RTP is performed on the resultant structure. The second implantation process is performed on the semiconductor substrate at both sides of the insulation layer spacer to form a high density implant region. The second RTP is performed on the resultant structure to form a source/drain region(115).
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