发明名称 |
ELECTROCHEMICAL MECHANICAL POLISHING APPARATUS FOR CONTROLLING SLURRY REACTIVITY |
摘要 |
PURPOSE: An electrochemical mechanical polishing(ECMP) apparatus for controlling slurry reactivity is provided to control electrochemical reactivity on a wafer by forming metal electrodes in a polishing pad and at the end of a retainer ring so that the wafer functions as a working electrode and the metal in the polishing pad functions as a counter electrode. CONSTITUTION: The metal electrode is formed at the end of the retainer ring(20) so as to be electrically connected to the wafer(22). An inner metal(12) is formed under the polishing pad(10) and in the vicinity of a slurry exhausting hole. The first and second electrodes of a power unit(30) are respectively formed in the metal electrode of the retainer ring and the inner metal of the polishing pad wherein the voltage and current of the power unit is controllable. A slurry exhausting apparatus(40) supplies the slurry including an electrolyte component to the polishing pad.
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申请公布号 |
KR20030058578(A) |
申请公布日期 |
2003.07.07 |
申请号 |
KR20010089092 |
申请日期 |
2001.12.31 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, U JIN;PARK, HYEONG SUN |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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