METHOD FOR MANUFACTURING FLASH MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a flash memory device is provided to be capable of reducing manufacturing processes by forming a gate contact hole while carrying out a self-alignment source etching process and a drain contact hole forming process. CONSTITUTION: A stack gate is formed on the upper portion of a semiconductor substrate(11), wherein the semiconductor substrate has an isolation layer for defining an active region and a field region. A source/drain region(18) are formed at predetermined portions of the semiconductor substrate by carrying out an ion implantation. A gate contact region is defined by selectively etching the stack gate using a self-alignment source etching process. After depositing an insulating layer on the resultant structure, a spacer(19) is formed at both sidewalls of the stack gate and at both sidewalls of the selectively etched portion of the stack gate. After depositing an interlayer dielectric(20) on the resultant structure, a drain contact hole(21) and a gate contact hole(22) are simultaneously formed by selectively etching the interlayer dielectric.