| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film growing device which can quickly change the temperature of a substrate and can shorten the forming time of a compound semiconductor composed of multiple layers by suppressing the surface variation of a crystal when the growth of the crystal is interrupted,and a method for manufacturing a gallium nitride compound semiconductor by using the device. SOLUTION: In a thin film growing device provided with a growing chamber 1, a substrate holder 2 installed in the chamber 1, and a substrate heater 3 which heats the holder 2, a distance control means which can control the distance between the holder 2 and heater 3 is provided. In a method for manufacturing gallium nitride compound semiconductor, the distance between the holder 2 and heater 3 is made larger as the In composition ratio increases at the time of laminating AlInGaN layers having different composition ratios by using the thin film growing device. |
