METHOD FOR FABRICATING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to prevent a process characteristic from being deteriorated in a metal interconnection contact process by using a nitride layer as an interlayer dielectric formed after a capacitor is formed. CONSTITUTION: A capacitor is formed on a semiconductor substrate(11). The nitride layer is formed as the interlayer dielectric on the capacitor. The interlayer dielectric is planarization-etched. The interlayer dielectric is etched to form a metal interconnection contact hole exposing the capacitor through a photolithography process using a metal interconnection contact mask. A cleaning process using an HF solution and a buffer oxide etchant(BOE) solution is performed on the surface of the contact hole. The metal interconnection connected to the capacitor through the contact hole is formed.