METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to form selectively a silicide layer on only a gate electrode. CONSTITUTION: A gate insulation layer and a gate electrode is stacked on a semiconductor substrate(21). A source/drain region(26) is formed at both sides of the gate electrode. The first and second insulation layer are sequentially deposited on the substrate including the gate electrode(23). The second insulation layer is removed to leave only the source/drain region at both sides of the gate electrode. The first insulation layer is removed to protrude the upper part of the gate electrode. A silicide layer(29) is formed on the gate electrode.