METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to reduce the thickness of a photoresist layer pattern and guarantee a process margin by performing an exposure process on the photoresist layer pattern as a contact mask and by silylating an exposure region of the photoresist layer pattern. CONSTITUTION: An interlayer dielectric(13) is formed on a semiconductor substrate(11) including a predetermined underlying structure. The photoresist layer pattern exposing a portion reserved for a metal interconnection contact is formed on the interlayer dielectric. An exposure process is performed on the entire surface of the photoresist layer pattern. The exposure region of the photoresist layer pattern is silylated to increase a difference of etch selectivity regarding the interlayer dielectric. The interlayer dielectric is etched to form a contact hole by using the silylated photoresist layer pattern as an etch mask.