发明名称 NONVOLATILE MEMORY DEVICE
摘要 PURPOSE: A nonvolatile memory device is provided to calculate a checksum value using hardware by mounting a checksum calculation circuit and a control circuit. CONSTITUTION: An address/data control circuit unit(12) processes an address and data input/output in accordance with a read or write command signal. A row decoder unit(14) selects a row of a main memory by a row address transmitted in the address/data control circuit unit(12). A column decoder unit(13) selects a column of a main memory by a column address transmitted in the address/data control circuit unit(12). A data latch circuit unit(15) temporarily stores read data transmitted in the main memory or write data transmitted in the address/data control circuit unit(12). A checksum calculation circuit unit(17) calculates the sum of data stored in each address of the main memory. A control circuit unit(16) receives a checksum request signal and a checksum program signal, generates a signal for controlling an operation of the checksum calculation circuit unit(17), and stores a checksum in a specific address wanted by a user.
申请公布号 KR20030058617(A) 申请公布日期 2003.07.07
申请号 KR20010089131 申请日期 2001.12.31
申请人 BOE HYDIS TECHNOLOGY CO., LTD. 发明人 KIM, YONG IL;OH, HANG SEOK
分类号 G06F12/00;(IPC1-7):G06F12/00 主分类号 G06F12/00
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