METHOD OF TESTING CONTACT OPENING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of testing the contact opening of a semiconductor device is provided to be capable of effectively testing contact opening defects and improving productivity. CONSTITUTION: A lithography process is performed for forming a contact(31). After sampling at least one wafer, the test of contact opening is performed through SAC(Self-Aligned Contact) and SEG(Selective Epitaxial Growth) processing(35) by using SEM(Scanning Electron Microscopy) or FIB(Focused Ion Beam). Contact etching is performed according to the test result(33). At the time, The selective epitaxial growth is carried out at the high temperature of 900-1200°C.