METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to guarantee sufficient capacitance according to high integration of the semiconductor device by changing the lower structure of a stack-type storage electrode. CONSTITUTION: The first interlayer dielectric(13) which is planarized and has a gate electrode is formed on a semiconductor substrate(11). The second interlayer dielectric(15) is formed on the first interlayer dielectric. The third interlayer dielectric is formed on the second interlayer dielectric. The third, second and first interlayer dielectrics are etched to form a contact hole through a contact etch process. The first polysilicon layer(21) is formed to fill the contact hole. The first polysilicon layer and a predetermined thickness of the third interlayer dielectric in a region except a storage electrode formation region are etched to form a trench through a photolithography process using a storage electrode mask. The second polysilicon layer spacer is formed on the sidewall of the trench and the third interlayer dielectric is removed so that a storage electrode composed of the first polysilicon layer and the second polysilicon layer spacer is formed.